Code: beElectronics & Comm. Eng.3rd Semester5 Examination Papers

BASIC ELECTRONICS ENGINEERING

Official Bihar Engineering University examination question papers, marks distribution, and questions transcript. Available exam sessions: 2021, 2020.

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Official Exam Paper TranscriptB.Tech 3rd Semester Exam., 2021 (New Course)
Bihar Engineering University, Patna
B.Tech 3rd Semester Exam., 2021 (New Course)

BASIC ELECTRONICS ENGINEERING

Time: 03 HoursCode: 100303Full Marks: 70

Instructions:

  1. The marks are indicated in the right-hand margin.
  2. There are NINE questions in this paper.
  3. Attempt FIVE questions in all.
  4. Question No. 1 is compulsory.
Q.1 Answer the following questions (any seven) :[14]
  1. Derive the relation between β and α of a transistor. What is reverse leakage current in CE configuration?

  2. What is modulation index in AM?

  3. What is the concept of frequency reuse in cellular network?

  4. What is the use of offset null input in the operational amplifier? How are they used?

  5. Why is negative feedback desired in amplifier application?

  6. Emitter bias or self-bias is more stable than fixed bias. Justify.

  7. Explain how the process of avalanche breakdown occurs in a P-N junction diode. How is it different from Zener breakdown?

  8. Justify that overlinemj= Mj where mj and Mj are th minterm (product term) and maxterm (sum term) respectively.

  9. Mention the disadvantages of Wien bridge oscillator.

  10. Mention the applications of one-shot multivibrator.

Q.2 Solve both questions :[14]
  1. Draw the waveform of output voltage V0 if input is square wave and explain the operation of circuit given below.

    Question Diagram
  2. Calculate the IRMS, IDC, ripple factor, rectification efficiency and PIV of rectifier circuit given below.

    Question Diagram
Q.3 Solve both questions :[14]
  1. For the network of figure given below, determine the following parameters using the approximate equivalent model: Voltage gain Av, Current gain Ai, Input impedance Zi' and Zi.

    Question Diagram
  2. Draw the circuit diagram of voltage-series feedback amplifier and derive the expression of closed-loop voltage gain.

Q.4 Solve both questions :[14]
  1. Explain the operation performed by circuit given below and derive the expression of output voltage V0.

    Question Diagram
  2. Op-amp can be used to subtract the DC voltages (subtraction operation). Draw the circuit and explain the operation of subtractor using op-amp in non-inverting mode.

Q.5 Solve both questions :[14]
  1. Draw and explain the GSM signalling protocol architecture.

  2. What is the need of modulation? Draw the wave shape of modulating signal, carrier signal and modulated wave in amplitude modulation.

Q.6 Solve both questions :[14]
  1. Draw the functional block diagram and explain the operation of monostable multi-vibrator using IC 555 timer.

  2. Draw the basic circuit of an R-C phase-shift oscillator and explain its operation. If R1= R2= R3= 400kΩ and C1= C2= C3= 50pF, determine the frequency of oscillation in phase-shift oscillator.

Q.7 Solve both questions :[14]
  1. Implement the function F(A,B,C) =Σ(1,3,4,6,7) using 8×1 MUX. Use A, B and C as selection line in which C is LSB and A is MSB.

  2. Design 3-bit binary incrementer/decrementer circuit with the help of gates. When inputs are 000 and control pin is low, output should be 111. When inputs are 111 and control pin is high, output should be 000. For other combinations of inputs, when control pin is high, output should be incremented by one and when control pin is low, output should be decremented by one.

Q.8 Solve both questions :[14]
  1. Design a combinational circuit to check that two numbers A = (A3A2A1A0) and B = (B3B2B1B0) are equal with the help of gates. Output should be indicated by X. Output line X should be high if A = B.

  2. Design 8×3 priority encoder with the help of basic gates.

Q.9 Solve both questions :[14]
  1. Compare the function and architecture of microprocessor and microcontroller.

  2. Draw the input-output and transfer characteristics of CE amplifier.

Related Official Syllabus

Electronic Devices and Circuit Theory

104301

Official BEU curriculum units & topics for this examination subject.

Unit 1.0: Semiconductor Physics and Carrier Action

Energy Bands and Charge Carriers in Semiconductors: E-k diagram • Charge carrier concentration • Intrinsic carrier concentration • Law of mass action • Carrier transportation: Drift, diffusion, surface effects • Continuity equation in steady state condition • Fermi level • Quasi-Fermi energy level • Hall Effect

Unit 2.0: Classical Diodes

Junction capacitance • Varactor diode • Tunnel diode • IMPATT diode • Gunn diode • Difference between rectifying contact and ohmic contact • Schottky Diode

Unit 3.0: Bipolar Junction Transistor

Bipolar Junction Transistor: bipolar transistor action • Minority carrier distribution • Non-ideal effects • Equivalent circuits • Ebers-Moll Model • Hybrid-pi model • Frequency limitations

Unit 4.0: Field Effect Transistors

Field-Effect Transistors: JFET and its characteristics • Pinch off voltage and drain saturation current • MOSFET: The MOS capacitor • N-channel enhancement-mode MOSFET: transistor structure • I-V characteristics • PMOS • MOSFET dc circuit analysis • Basic MOSFET applications: switch, digital logic gate and amplifier • Biasing of FETs and MOSFETs • Non-ideal effects • MOSFET scaling • Threshold voltage modification due to short and narrow channel effects • Avalanche breakdown • Drain induced barrier effects • Basics of CMOS

Unit 5.0: Special Semiconductor Devices

SCR, Triac and DIAC (Construction, Working, Characteristics and Application) • UJT Relaxation Oscillator • Photo Diodes (Pin and Avalanche) • Solar Cell • LED • Laser Diodes • LDR

View Complete 3rd Semester Syllabus

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